Loading patent…
AssigneeSTMicroelectronics S.r.l.
InventorsGianfranco Cerofolini, Giuseppe Ferla
Estimating the term…
A method of fabricating a MOS transistor with a controllable and modulatable conduction path through a dielectric gate oxide is disclosed, wherein the transistor structure comprises a dielectric oxide layer formed between two silicon plates, and wherein the silicon plates overhang the oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape. The method comprises the steps of: chemically altering the surfaces of the silicon plates to have different functional groups provided in the undercut from those in the remainder of the surfaces; and selectively reacting the functional groups provided in the undercut with an organic molecule having a reversibly reducible center and a molecular length substantially equal to the width of the undercut, thereby to establish a covalent bond to each end of the organic molecule.
A semiconductor electronic device comprising a layer of dielectric silicon oxide formed between two silicon plates, wherein said plates overhang said oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape and a preset height, and wherein surfaces of said plates at said undercut have different functional groups from functional groups in surfaces of the plate not at said undercut.
A semiconductor electronic device having a controllable and modulatable conduction path through a dielectric silicon oxide, the device comprising a layer of said dielectric silicon oxide formed between two silicon plates, wherein said silicon plates overhang said silicon oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape and a preset height, wherein an organic molecular moiety is provided within said undercut which contains a reversibly reducible center and whose molecular length substantially equals a width of said undercut, said organic molecular moiety being anchored with its ends in opposite surfaces of said undercut.
A semiconductor electronic device having a controllable and modulatable conduction path, the device comprising:
Dependencies are inferred from the claim text.