Faraday system for ion implanters
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsJack Bisson, Zhiyong Zhao, George Gammel, Daniel Alvarado, Craig Walker
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AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsJack Bisson, Zhiyong Zhao, George Gammel, Daniel Alvarado, Craig Walker
Estimating the term…
A Faraday system for measuring ion beam current in an ion implanter or other ion beam treatment system includes a Faraday cup body defining a chamber which has an entrance aperture for receiving an ion beam, a suppression electrode positioned in proximity to the entrance aperture to produce electric fields for inhibiting escape of electrons from the chamber, and a magnet assembly positioned to produce magnetic fields for inhibiting escape of electrons from the chamber. The chamber may have a relatively small ratio of chamber depth to entrance aperture width.
A Faraday system for use in an ion beam treatment system, comprising:
A Faraday system for use in an ion beam treatment system, comprising:
A Faraday system for use in an ion beam treatment system, comprising:
A method for measuring ion current in an ion beam treatment system, comprising steps of:
A Faraday system for use in an ion beam treatment system, comprising:
A method for measuring ion current in an ion beam treatment system, comprising steps of:
Dependencies are inferred from the claim text.