Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming an insulating film on a semiconductor substrate;
• forming a wiring line groove in said insulating film;
• forming a first conductive film to cover an inner wall surface of said wiring line groove and said insulating film;
• forming a second conductive film to fill said wiring line groove and to cover said first conductive film;
• removing said first and second conductive films using a CMP polishing method until said insulating film is exposed, to complete a wiring line;
• rinsing a front side of said semiconductive substrate, on which said wiring line is formed;
• and
• rinsing a backside of said semiconductor substrate while supplying to said front side of said semiconductor substrate, a protection solution which forms a protection film on an exposed surface of said wiring line.

A method of manufacturing a semiconductor device, comprising:

• forming a first damascene wiring line above a semiconductor substrate using a conductive film;
• forming an upper insulating film on said first damascene wiring line;
• forming a via-hole to pass through said upper insulating film to said first damascene wiring line;
• forming a second damascene wiring line in said via-hole;
• and
• rinsing a backside of said semiconductor substrate while rinsing a front side of said semiconductor substrate with a protection solution which forms a protection film on an exposed surface of said second damascene wiring line.

The method of manufacturing a semiconductor device, comprising:

• forming a damascene wiring line above a semiconductor substrate using a conductive film;
• rinsing a front side of said semiconductor substrate on which said damascene wiring line is formed;
• and
• rinsing a backside of said semiconductor substrate while rinsing said front side of said semiconductor substrate with a protection solution which forms a protective film on an exposed surface of said damascene wiring line.