US 6,723,612 B2 · Semiconductor integrated circuit device and method of manufacturing the same

Abstract

In a semiconductor integrated circuit device, a polycrystalline silicon film is formed along an inner wall of a trench in which a capacitor is to be formed, and the polycrystalline silicon film and a lower electrode are contacted to each other on the entire inner wall of the trench. Oxygen permeated into the lower electrode during a thermal treatment of a tantalum oxide film is consumed at an interface between the polycrystalline silicon film and the lower electrode. Thus, oxygen does not reach the surface of a silicon plug below the lower electrode that would cause oxidation on the surface of the silicon plug and form a high-resistance oxide layer when a dielectric film formed on a lower electrode of a capacitor of a DRAM is subjected to a thermal treatment in an oxygen atmosphere.

Claims20

Dependent claims

A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:

(a) forming a first connection hole in a first insulating film formed over a main surface of a semiconductor substrate, and burying a first conductive layer in the first connection hole;
(b) forming a second insulating film over the first insulating film, and forming a trench in the second insulating film over the first connection hole;
(c) forming a metal silicide layer over a sidewall and bottom surface of the trench, the metal silicide layer being electrically connected to the first conductive layer in the first connection hole;
(d) forming a lower electrode of a capacitor over the metal silicide layer;
(e) forming a capacitor insulating film of the capacitor over the lower electrode;
and
(f) forming an upper electrode of the capacitor over the capacitor insulating film,
wherein a thermal treatment is performed in an oxidizing atmosphere after forming the capacitor insulating film of the capacitor, and
wherein a thermal treatment is further performed in a non-oxidizing atmosphere after the thermal treatment.

6 more elements

A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:

(a) forming a first connection hole in a first insulating film formed over a main surface of a semiconductor substrate, and burying a first conductive layer in the first connection hole;
(b) forming a second insulating film over the first insulating film, and forming a trench in the second insulating film over the first connection hole;
(c) forming a metal silicide layer over a sidewall and bottom surface of the trench, the metal silicide layer being electrically connected to the first conductive layer in the first connection hole, and lowering a position of an upper end of the metal silicide layer over the sidewall of the trench to below an upper end of the trench;
(d) after the step (c), forming a lower electrode of a capacitor over the sidewall and bottom surface of the trench to cover an entire surface of the metal silicide layer with the lower electrode;
(e) forming a capacitor insulating film of the capacitor over the lower electrode;
and
(f) forming an upper electrode of the capacitor on the capacitor insulating film,
wherein a thermal treatment is performed in an oxidizing atmosphere after forming the capacitor insulating film of the capacitor, and
wherein a thermal treatment is further performed in a non-oxidizing atmosphere after the thermal treatment.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor integrated circuit device and method of manufacturing the same

Life of this patent

Semiconductor integrated circuit device and method of manufacturing the same

Life of this patent

Abstract

Claims20