Method of forming fine patterns of semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Seok Nam, Ji-Soo Kim
Life of this patent
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Abstract
In the method of forming fine patterns of a semiconductor integrated circuit, a mask layer is formed over a semiconductor structure having a first region and a second region. A portion of the mask layer over the first region is removed to expose the semiconductor structure, and sacrificial layer patterns are formed over the exposed semiconductor structure. Then, spacers are formed on sidewalls of the sacrificial layer patterns and the mask layer, and portions of the spacers are removed to create fine mask patterns. The semiconductor structure is then patterned using the fine mask patterns to create fine patterns.
Claims20
A method of forming fine patterns of a semiconductor integrated circuit, comprising:
- forming a mask layer over a semiconductor structure having a first region and a second region;
- removing a portion of the mask layer over the first region to expose the semiconductor structure;
- forming sacrificial layer patterns over the exposed semiconductor structure;
- forming spacers on sidewalls of the sacrificial layer patterns and the mask layer;
- simultaneously removing portions of the spacers and the mask layer to create the fine mask patterns in the first region and device mask patterns in the second region;
- and
- patterning the semiconductor structure using the fine mask patterns and the device mask patterns to create the fine patterns in the first region and device patterns in the second region.
The method of clam 1, prior to the patterning step, further comprising:
- removing the sacrificial layer patterns.
A method of forming fine patterns of a semiconductor integrated circuit, comprising:
- forming sacrificial layer patterns over a first region of a semiconductor structure defined by a mask layer over a second region of the semiconductor structure;
- forming spacers on sidewalls of the sacrificial layer patterns and the mask layer;
- simultaneously removing portions of the spacers and the mask layer to create fine mask patterns in the first region and device mask patterns in the second region;
- and
- patterning the semiconductor structure using the fine mask patterns and device mask patterns to create fine patterns in the first region and device patterns in the second region.
Dependencies are inferred from the claim text.