Monitoring of concentration of nitrogen in nitrided gate oxides, and gate oxide interfaces

A method for regulating nitrided gate oxide layer formation, comprising:

• partitioning a wafer into a plurality of grid blocks;
• using one or more nitrided gate oxide layer formers to form one or more nitrided gate oxide layers on the wafer, each nitrided gate oxide former functionally corresponding to a respective grid block;
• determining nitrogen concentration of the one or more nitrided gate oxide layer formations on one or more portions of the wafer, each portion corresponding to a respective grid block;
• and
• using a processor to coordinate control of the nitrided gate oxide layer formers, respectively, in accordance with determined nitrided gate oxide nitrogen concentration of the respective portions of the wafer.

A method for regulating nitrided gate oxide layer formation, comprising:

• defining a wafer as a plurality of portions;
• establishing one or more nitrided gate oxide layer formations to be formed;
• directing light onto at least one of the nitrided gate oxide layer formations;
• collecting light reflected from at least one nitrided gate oxide layer formation;
• analyzing the reflected light to determine nitrogen concentration of the at least one nitrided gate oxide layer formation;
• controlling one or more nitrided gate oxide layer formers to regulate gate oxide formation of the at least one nitrided gate oxide layer formation;
• collecting light passing through the at least one nitrided gate oxide layer formation;
• and
• analyzing the passed through light to determine the nitrogen concentration of the at least one nitrided gate oxide layer formation.

A method for regulating nitrided gate oxide layer formation, comprising:

• defining a wafer as a plurality of portions;
• establishing one or more nitrided gate oxide layer formations to be formed;
• directing light onto at least one of the nitrided gate oxide layer formations;
• collecting light reflected from at least one nitrided gate oxide layer formation;
• analyzing the reflected light to determine nitrogen concentration of the at least one nitrided gate oxide layer formation using a scatterometry system;
• controlling one or more nitrided gate oxide layer formers to regulate gate oxide formation of the at least one nitrided gate oxide layer formation;
• and
• using a processor to control the at least one nitrided gate oxide former based at least partially on data received from the scatterometry system.