Metal layer in semiconductor device including a planar stuffed layer and an insulating film with a projection and method for fabricating the same

Abstract

Metal layer in a semiconductor device and method for fabricating the same, the semiconductor device having a transistor and a capacitor electrode formed on a region of a semiconductor substrate, the metal layer including a planar protection film on an entire surface of the semiconductor substrate inclusive of the transistor and the capacitor electrode, an absorber layer over the planar protection film inclusive of a region over the transistor, an insulating film on an entire surface, with a width of projection in a relievo form in a region over the absorber layer, a via hole through the planar protection film and the insulating layer, to expose a region of the capacitor electrode, a tungsten plug and a planar stuffed layer in the via hole, a mirror metal layer on the insulating film on both sides of the projection of a relievo form of the insulating film, inclusive of the planar stuffed layer, and an insulating film spacer on the projection of a relievo form of the insulating film and the mirror metal layer in the vicinity of the projection, whereby improving a light transmission ratio and enhancing an optical contrast.

Dependencies are inferred from the claim text.