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US 6,720,635 B1Granted
Electronic component
AssigneeMotorola, Inc.
InventorsDaniel J. Koch, Bishnu Prasanna Gogoi, Raymond M. Roop
Life of this patent
Estimating the term…
Abstract
An electronic component includes a composite semiconductor substrate (110, 810) having a first side (111) opposite a second side (112), a semiconductor device (160, 170) at the first side of the composite semiconductor substrate, and a transducer (400, 600, 900) at the second side of the composite semiconductor substrate.
Claims21
An electronic component comprising:
- a composite semiconductor substrate having a first side opposite a second side;
- a semiconductor device at the first side of the composite semiconductor substrate;
- and
- a transducer at the second side of the composite semiconductor substrate.
1 more element
An electronic component comprising:
- a silicon-on-insulator substrate having a first side opposite a second side, the silicon-on-insulator substrate comprising:
- a first silicon layer at the first side;
- a second silicon layer at the second side;
- and
- a silicon dioxide layer located between the first and second silicon layers;
- a plurality of transistors located at least partially in the first silicon layer;
- multi-layered interconnect system located over the plurality of transistors and the first side of the silicon-on-insulator substrate wherein the multi-layered interconnect system electrically couples together the plurality of transistors;
- and
- an electromechanical transducer located at least partially in the second silicon layer.
6 more elements
An electronic component comprising:
- a silicon-on-insulator substrate comprising a first side and a second side opposite the first side, a first silicon layer at the first side, a second silicon layer at the second side, and a silicon dioxide layer located between the first and second silicon layers, wherein the silicon-on-insulator substrate has a hole extending through the first silicon layer and the silicon dioxide layer;
- and
- an electrical contact to the second silicon layer located at the first side of the silicon-on-insulator substrate wherein the electrical contact is comprised of an electrically conductive layer covering a portion of the first silicon layer, extending into the hole through the first silicon layer, and extending into the hole through the silicon dioxide layer to electrically contact the second silicon layer.
Dependencies are inferred from the claim text.