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US 6,720,621 B1Granted
SOI semiconductor device with resistor body
AssigneeSharp Kabushiki Kaisha
InventorAlberto Oscar Adan
Life of this patent
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Abstract
A SOI semiconductor device comprises a resistor body which is formed of a top semiconductor layer in a SOI substrate having an embedded dielectric film and the top semiconductor layer formed on the embedded dielectric film and which is dielectrically isolated by an insulating film, wherein a resistance value of the resistor body is set to be a predetermined value by the concentration of impurities contained in the top semiconductor layer and by the dimension of the resistor body.
Claims12
A SOI semiconductor device comprising:
- a resistor body which is formed of a top semiconductor layer in a SOI substrate, the SOI substrate including an embedded dielectric film and the top semiconductor layer of the SOI substrate being formed on the embedded dielectric film and being electrically isolated by an insulating film which at least partially surrounds the top semiconductor layer,
- wherein a resistance value of the resistor body is determined by the concentration of impurities contained in the top semiconductor layer and by the dimension of the resistor body, and
- wherein sufficient impurities are provided in the resistor body so that the resistor body is partially depleted so that a non-depleted region is provided therein between the embedded dielectric film and a bottom edge of a depletion region of the top semiconductor layer under at least a control electrode which is provided over at least part of the resistor body.
A SOI semiconductor device comprising:
- an electrically variable resistor body which is formed of a top semiconductor layer in a SOI substrate, the SOI substrate comprising an embedded dielectric film and the top semiconductor layer formed on the embedded dielectric film and which has a control electrode disposed on the top semiconductor layer with intervention of a dielectric film,
- wherein the resistor body is partially depleted by the control electrode to form a neutral region through which electric current flows,
- the resistor body has highly concentrated diffusion layers of a first conductive type at both ends in a conduction direction,
- both side walls of the resistor body along the conduction direction are junction-isolated by highly concentrated diffusion layers of a second type, and
- wherein the highly concentrated diffusion layers of the second conductivity type along the both side walls of the resistor body are connected together and grounded.
2 more elements
A SOI semiconductor device comprising:
- an electrically variable resistor body which is formed of a top semiconductor layer in a SOI substrate, the SOI substrate comprising an embedded dielectric film and the top semiconductor layer formed on the embedded dielectric film,
- wherein the resistor body is partially depleted by the control electrode to form a neutral region through which electric current flows, so that a non-depleted region is provided in the resistor body between the embedded dielectric film and a bottom edge of a depletion region of the top semiconductor layer,
- the resistor body has highly concentrated diffusion layers of a first conductive type at both ends in a conduction direction,
- both side walls of the resistor body along the conduction direction are junction-isolated by highly concentrated diffusion layers of a second type, and
- an I-shaped control electrode disposed on the top semiconductor layer with intervention of a dielectric film so that application of voltage to the control electrode can alter resistance of the resistor body.
2 more elements
Dependencies are inferred from the claim text.