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US 6,720,608 B2Granted
Metal-insulator-metal capacitor structure
AssigneeUnited Microelectronics Corp.
InventorChiu-Te Lee
Life of this patent
Estimating the term…
Abstract
A metal-insulator metal (MIM) capacitor structure has a copper layer within a dielectric layer positioned on a substrate, an alloy layer atop the copper layer, a metal oxide layer atop the alloy layer and a top pad layer atop the metal oxide layer.
Claims15
A metal-insulator metal (MIM) capacitor structure comprising:
- a metal layer, the metal layer comprising copper;
- a copper-aluminum (Cu—Al) alloy layer atop the metal layer;
- an aluminum oxide (Al2O3) layer atop the copper-aluminum alloy layer;
- and
- a top pad layer atop the aluminum oxide layer.
2 more elements
A MIM capacitor structure comprising:
- a copper layer within a dielectric layer positioned on a substrate;
- a copper-aluminum alloy layer atop the copper layer, the copper-aluminum alloy layer completely covering a top surface of the copper layer, a top surface of the copper-aluminum alloy layer being aligned with a top surface of the dielectric layer;
- an aluminum oxide layer atop the copper-aluminum alloy layer, the aluminum oxide layer covering portions of the top surface of the copper-aluminum alloy layer;
- a top pad layer atop the aluminum oxide layer;
- a first via plug;
- and
- a second via plug.
4 more elements
Dependencies are inferred from the claim text.