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US 6,720,602 B2Granted
Dynamic random access memory (DRAM) cell with folded bitline vertical transistor and method of producing the same
AssigneeInternational Business Machines Corporation
InventorsLawrence A. Clevenger, Louis Lu-Chen Hsu, Jack A. Mandelman, Carl D. Radens
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Abstract
A semiconductor device and a method for forming the semiconductor device, include forming a mandrel, forming spacer wordline conductors on sidewalls of the mandrel, separating, by using a trim mask, adjacent spacer wordline conductors, and providing a contact area to contact alternating ones of pairs of the spacer wordline conductors.
Claims20
A semiconductor device, comprising:
- a silicon substrate;
- a mandrel formed above said silicon substrate;
- a plurality of spacer wordline conductors fanned on sidewalls of said mandrel, adjacent ones of said spacer wordline conductors being separated;
- a contact to contact alternating ones of pairs of said spacer wordline conductors, and
- a vertical channel transistor comprising a gate conductor, at least a portion of one of said plurality of spacer wordline conductors being formed on said gate conductor.
2 more elements
Dependencies are inferred from the claim text.