FeRam semiconductor device with improved contact plug structure
AssigneeFujitsu Limited
InventorYoichi Okita
Life of this patent
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Abstract
There is provided a semiconductor device having a ferroelectric capacitor, which comprises capacitor protection films for covering an upper surface and a side surface the ferroelectric capacitor that is formed on a first insulating film, a hole formed in a second insulating film, which is formed on the capacitor protection films and the first insulating film, to be positioned adjacently to the side surface of the ferroelectric capacitor via the capacitor protection films, and a conductive plug formed in the hole. Accordingly, alignment margin of the contact hole to be formed next to the capacitor can be reduced.
Claims10
A semiconductor device comprising:
- a first impurity diffusion region formed in a semiconductor substrate;
- a first insulating layer formed over the semiconductor substrate;
- a capacitor formed over the first insulating layer and having a lower electrode, a ferroelectric layer, and an upper electrode;
- an insulating capacitor protection layer made of material that is different from the first insulating layer, for covering an upper surface and a side surface of the capacitor;
- a second insulating layer formed over the capacitor protection layer and the first insulating layer, and made of material that is etched selectively from the capacitor protection layer;
- a first hole formed in the second insulating layer and positioned next to the side surface of the capacitor via the capacitor protection layer;
- and
- a first conductive plug formed in the first hole and connected electrically to the first impurity diffusion region.
Dependencies are inferred from the claim text.