Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers

Abstract

A cladded conductive interconnect for programming a magnetoresistive memory device which includes a conductive material with a length, a first barrier conductive material positioned on the conductive material, and a multi-layer cladding region positioned along the length of the conductive material wherein the multi-layer cladding region includes N ferromagnetic layers, where N is a whole number greater than or equal to two, and wherein the multi-layer cladding region further includes at least one spacer layer, wherein the spacer layer can include a metal, an insulator, or an exchange interaction material, and wherein the spacer layer is sandwiched therebetween each adjacent ferromagnetic layer.

Dependencies are inferred from the claim text.