Three-dimensional island pixel photo-sensor

A photodiode array comprising:

• a plurality of photodiode cores, each of said cores having a cube shape;
• light sensing sidewalls along an exterior of said cores, wherein said sidewalls are perpendicular to a surface of said photodiode that receives incident light;
• logic circuitry above said cores;
• trenches separating said cores;
• and
• a transparent material in said trenches.

A p-i-n island photodiode comprising:

• a n+ core having a cube shape;
• an intrinsic layer surrounding sides of said n+ core;
• a p+ layer surrounding sides of said intrinsic layer;
• at least one transistor above said n+ core;
• and
• light sensing sidewalls along an exterior of said p+ layer, wherein said sidewalls are perpendicular to a surface of said photodiode that receives incident light.

An island photodiode comprising:

• a core;
• vertical light sensing sidewalls along am exterior of said core;
• and
• transparent regions adjacent said sidewalls and exterior to said sidewalls.

A photodiode array comprising:

• a plurality of photodiode cores;
• vertical light sensing sidewalk along exteriors of said cores;
• trenches separating said cores;
• and
• a transparent material in said trenches.