Nitride type compound semiconductor light emitting element
AssigneeSharp Kabushiki Kaisha
InventorsToshio Hata, Mayuko Fudeta, Daigaku Kimura
Life of this patent
Estimating the term…
Abstract
In a nitride type compound semiconductor light emitting element, a phosphor layer is formed in a multilayer constituting the light emitting element. A highly-reflective layer is formed at a side plane of the light emitting element. The nitride type compound semiconductor light emitting element can emit white light or multi-colored light, and is superior in mass production and reliability. The wavelength of the emitted light can be converted into a different wavelength by the light emitting element alone.
Claims15
A nitride type compound semiconductor light emitting element formed of a multilayer structure including a substrate, a nitride gallium type compound semiconductor layer of a first conductivity type, a nitride gallium type compound semiconductor light emitting layer, and a nitride gallium type compound semiconductor layer of a second conductivity type,
- wherein a phosphor is provided in said multilayer structure or at a portion of said substrate and a transparent conductor film is located on and in contact with a layer including said phosphor.
Dependencies are inferred from the claim text.