US 6,720,251 B1 · Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing

Abstract

A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free anti-reflective layer produced by this technique eliminates the mushrooming and footing problems found with conventional anti-reflective layers.

Claims18

Dependent claims

A method of fabricating an anti-reflective layer of a dual damascene device in a chemical vapor deposition chamber, the method comprising the steps of:

forming a first layer of dielectric that is to be patterned;
forming an anti-reflective layer over the first layer using a source comprising a silane and a carbon oxide, wherein the anti-reflective layer is substantially nitrogen-free and comprises between about 20% and 80% oxygen;
patterning the first layer to define a dual damascene via;
and
filling said via with photoresist that contacts the anti-reflective layer.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

09/990,197Filed 21 Nov 2001 · us provisional application

Priority

28 Jun 2001

Granted

13 Apr 2004

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10P 14/6922
Containing silicon: the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
C23C 16/401
Oxides: containing silicon
G03F 7/091
Characterised by structural details, e.g. supports, auxiliary layers: characterised by antireflection means or light filtering or absorbing means,…
H10P 50/73
Etching of wafers, substrates or parts of devices: using masks for insulating materials

Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing

Life of this patent

Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing

Life of this patent

Abstract

Claims18