Back to results
US 6,720,250 B2Granted
Method of manufacturing a semiconductor device using a slurry for chemical mechanical polishing of copper
AssigneeKabushiki Kaisha Toshiba
InventorsGaku Minamihaba, Hiroyuki Yano
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device using a polishing slurry for CMP of Cu, which includes a first complexing agent containing a heterocyclic compound which is capable of forming a water-insoluble complex with Cu, and a second complexing agent containing a heterocyclic compound which is capable of forming a slightly water-soluble or water-soluble complex with Cu to thereby provide at least one extra ligand subsequent to formation of the complex.
Claims11
A method of manufacturing a semiconductor device, which comprises:
- forming a groove and/or a hole in an insulating film formed above a surface of a substrate;
- depositing a copper film above a surface of said insulating film to thereby bury said groove and/or said hole with said copper film;
- and
- polishing said copper film by making use of a polishing slurry comprising a first complexing agent containing a heterocyclic compound which is capable of forming a water-insoluble complex with Cu;
- and a second complexing agent containing a heterocyclic compound which is capable of forming a slightly water-soluble or water-soluble complex with Cu to thereby provide at least one extra ligand subsequent to formation of the complex, with a protective film being formed on the copper film, said protective film containing a first complex wherein the first and second complexing agents are coordinately bonded to copper, and a second complex wherein only the first complexing agent is coordinately bonded to cooper, thereby filling said groove and/or hole with said copper film and removing the portion of said copper film which is deposited above said insulating film formed outside of said groove and/or hole.
2 more elements
Dependencies are inferred from the claim text.