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US 6,720,239 B2Granted
Synthesis of layers, coatings or films using precursor layer exerted pressure containment
AssigneeHeliovoit Corporation
InventorBilly J. Stanbery
Life of this patent
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Abstract
Systems and methods are described for synthesis of films, coatings or layers using precursor exerted pressure containment. A method includes exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.
Claims73
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate and a release layer is located between the tool and the first precursor layer.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate;
- and
- coupling another precursor layer to the tool after moving.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate and an electrode layer is located between the second precursor layer and the second substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor lever that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate;
- and
- applying an electrostatic field across the first precursor and the second precursor.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and a template layer is located between the first precursor layer and the first substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and a surfactant is located between the first precursor layer and the first substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and a surfactant is located between the first precursor and the second precursor.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and an adhesion layer is located between the first precursor layer and the first substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrates;
- and
- depositing a buffer layer on the composition layer.
3 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- modifying at least a part of the first substrate, wherein the composition layer remains coupled to the second substrate, wherein modifying includes removing and a portion of the first substrate is not removed.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed from multinary compounds;
- and
- modifying at least a part of the first substrate, wherein the film remains coupled to the second substrate, modifying includes removing and removing includes etching.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed from multinary compounds;
- and
- modifying at least a part of the first substrate, wherein the film remains coupled to the second substrate, modifying includes removing and a portion of the first substrate is not removed.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrates;
- forming a coating;
- and
- modifying at least a part of the first substrate, wherein the coating remains coupled to the second substrate, wherein modifying includes removing and removing includes etching.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- modifying at least a part of the first substrate, wherein the coating remains coupled to the second substrate, wherein modifying includes removing and a portion of the first substrate is not removed.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and the pressure is sufficient to substantially prevent escape of vapor from the first precursor layer, the second precursor layer and the film.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a release layer is located between the tool and the first precursor layer.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate;
- and
- coupling another precursor layer to the tool after moving.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and an electrode layer is located between the second precursor layer and the second substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and the film includes copper, indium and selenide.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate;
- and
- applying an electrostatic field across the first precursor and the second precursor.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and a template layer is located between the first precursor layer and the first substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and a template layer is located between the second precursor layer and the second substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a surfactant is located between the first precursor layer and the first substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a surfactant is located between the first precursor and the second precursor.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein an adhesion layer is located between the first precursor layer and the first substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate wherein the film remains coupled to the second substrate, wherein a diffusion barrier layer is located between the first precursor layer and the first substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a diffusion barrier layer is located between the second precursor layer and the second substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate an a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and
- the first precursor layer is coupled to the first substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition;
- and
- the second precursor layer is coupled to the second substrate by deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition.
4 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate;
- and
- depositing a buffer layer on the film.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and the pressure is sufficient to substantially prevent escape of vapor from the first precursor layer, the second precursor layer and the coating.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- moving the first substrate relative to the second substrate, wherein a release layer is located between the tool and the first precursor layer.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate;
- and
- coupling another precursor layer to the tool after moving.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and an electrode layer is located between the second precursor layer and the second substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and the coating includes copper, indium and selenide.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate;
- and
- applying an electrostatic field across the first precursor and the second precursor.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and a template layer is located between the first precursor layer and the first substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- moving the first substrate relative to the second substrate, a template layer is located between the second precursor layer and the second substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- moving the first substrate relative to the second substrate, wherein a surfactant is located between the first precursor layer and the first substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- moving the first substrate relative to the second substrate, wherein a surfactant is located between the first precursor and the second precursor.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate
- forming a coating;
- and
- moving the first substrate relative to the second substrate, wherein an adhesion layer is located between the first precursor layer and the first substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and a diffusion barrier layer is located between the first precursor layer and the first substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and a diffusion barrier layer is located between the second precursor layer and the second substrate.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- moving the first substrate relative to the second substrate, wherein i) the coating remains coupled to the second substrate, ii) the first precursor layer is coupled to the first substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition, and iii) the second precursor layer is coupled to the second substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition.
1 more element
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- moving the first substrate relative to the second substrate wherein the coating remains coupled to the second substrate;
- and
- depositing a buffer layer on the coating.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate,
- wherein a template layer is located between the second precursor layer and the second substrate.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a composition layer;
- and
- modifying at least a part of the first substrate, wherein the composition layer remains coupled to the second substrate, wherein
- modifying includes removing;
- and
- moving includes etching.
4 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- moving the first substrate relative to the second substrate, wherein the film formed of multinary compounds remains coupled to the second substrate,
- wherein a template layer is located between the second precursor layer and the second substrate.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a film formed of multinary compounds;
- and
- modifying at least a part of the first substrate, wherein the film formed of multinary compounds remains coupled to the second substrate, wherein
- modifying includes removing;
- and
- moving includes etching.
4 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and
- moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate,
- wherein a template layer is located between the second precursor layer and the second substrate.
2 more elements
A method, comprising:
- exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
- forming a coating;
- and modifying at least a part of the first substrate, wherein the coating remains coupled to the second substrate, wherein
- modifying includes removing;
- and
- moving includes etching.
3 more elements
Dependencies are inferred from the claim text.