Power
AssigneeHewlett-Packard Development Company, L.P.
InventorHironori Uchida
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Abstract
A method of manufacturing a power switching transistor for a fluid ejection device includes forming a diffused drain region and a diffused source region separated by a channel region. The diffused drain region and the diffused source region are doped with a first dopant. A first portion of the diffused drain region is doped with a second dopant, such that the first portion of the diffused drain region has a greater impurity concentration than at least a second portion of the diffused drain region and has a greater impurity concentration than the diffused source region.
Claims8
A method of manufacturing a power switching transistor for a fluid ejection device, the method comprising:
- forming a diffused drain region and a diffused source region separated by a channel region;
- doping the diffused drain region and the diffused source region with a first dopant;
- and
- doping a first portion of the diffused drain region with a second dopant, wherein the first portion of the diffused drain region has a greater impurity concentration than at least a second portion of the diffused drain region and has a greater impurity concentration than the diffused source region.
Dependencies are inferred from the claim text.