US 6,720,214 B2Granted

Method for manufacturing semiconductor integrated circuit

AssigneeSeiko Epson Corporation

InventorYoshiteru Ono

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Abstract

A semiconductor integrated circuit is provided in which the transistor size can be minimized by only changing one mask after the performance of a prototype is tested. Impurity regions are formed in predetermined regions (formed of portions surrounded by solid lines and portions surrounded by broken lines) surrounded by a field insulating film on a semiconductor substrate for prototyping, and a prototype semiconductor integrated circuit is thereby manufactured, and then testing is performed. When the prototype semiconductor integrated circuit operates in a desired manner, impurity regions are formed in predetermined regions (formed of portions surrounded by solid lines only) surrounded by a field insulating film on a semiconductor substrate for shipment, and a semiconductor integrated circuit for shipment is thereby manufactured.

Claims8

Dependent claims

A method for manufacturing a semiconductor integrated circuit that includes a logic circuit having transistors, the method comprising the steps of:

forming a field insulating film having a first area in a predetermined region of a semiconductor substrate in order to manufacture a prototype semiconductor integrated circuit, the prototype semiconductor integrated circuit being usable to check whether the designed semiconductor integrated circuit operates accurately;
forming transistor gate insulating films and gate electrodes in predetermined regions of the semiconductor substrate for prototyping;
forming transistor impurity regions in predetermined regions surrounded by the field insulating film on the semiconductor substrate for prototyping using an impurity diffusion mask;
forming an interlayer insulating film so as to cover at least the gate electrodes and the impurity regions;
forming openings at predetermined positions of the interlayer insulating film;
forming a wiring layer to electrically be connected to the gate electrodes and the impurity regions through the openings;
testing the performance of the prototype semiconductor integrated circuit;
forming a field insulating film having a second area that is larger than the first area in a predetermined region of a new semiconductor substrate when the prototype semiconductor integrated circuit performs in a desired manner;
forming transistor gate insulating films and gate electrodes in predetermined regions of the new semiconductor substrate;
forming transistor impurity regions in predetermined regions surrounded by the field insulating film on the new semiconductor substrate using the impurity diffusion mask;
forming an interlayer insulating film so as to cover at least the gate electrodes and the impurity regions on the new semiconductor substrate;
forming openings at predetermined positions of the interlayer insulating film on the new semiconductor substrate;
and
forming a wiring layer to electrically be connected to the gate electrodes and the impurity regions through the openings of the new semiconductor substrate.

11 more elements

A method for manufacturing a semiconductor integrated circuit that includes a logic circuit having transistors, the method comprising the steps of:

forming a field mask (field mask for prototyping) suitable for manufacturing a prototype semiconductor integrated circuit, the prototype semiconductor integrated circuit being usable to check whether the designed semiconductor integrated circuit operates accurately;
forming a field insulating film in a predetermined region of a semiconductor substrate using the field mask for prototyping;
forming transistor ate insulating films and gate electrodes in predetermined regions of the semiconductor substrate for prototyping;
forming transistor impurity regions in predetermined regions surrounded by the field insulating film on the semiconductor substrate for prototyping using an impurity diffusion mask;
forming an interlayer insulating film so as to cover at least the gate electrodes and the impurity regions;
forming opening at predetermined positions of the interlayer insulating film;
forming a wiring layer to electrically be connected to the gate electrodes and the impurity regions through the openings;
testing the performance of the prototype semiconductor integrated circuit;
forming a field mask (field mask for shipment) suitable for manufacturing a semiconductor integrated circuit for shipment according to the results in the testing step;
forming a field insulating film in a predetermined region of a new semiconductor substrate using the field mask for shipment;
forming transistor gate insulating films and gate electrodes in predetermined regions of the new semiconductor substrate;
forming transistor impurity regions in predetermined regions surrounded by the field insulating film on the new semiconductor substrate using the impurity diffusion mask;
forming an interlayer insulating film so as to cover at least the gate electrodes and the impurity regions on the new semiconductor substrate;
forming openings at predetermined positions in the interlayer insulating film on the new semiconductor subs ate;
and
forming a wiring layer to electrically be connected to the gate electrodes and the impurity regions through the openings of the new semiconductor substrate.

13 more elements

Dependencies are inferred from the claim text.