Surface-emitted laser and method of fabrication thereof

A method of fabricating a vertical-cavity surface-emitting laser, comprising the steps of:

• forming a single crystal layer at a position above an active layer but below a reflective mirror on a light-emitting side;
• forming a non-single crystal insulation layer on said single crystal layer;
• forming a plurality of insulation aperture portions in said insulation layer, to form exposed portions of said single crystal layer;
• growing a multi-layer film non-selectively on said insulation layer and directly on said exposed portions of said single crystal layer;
• and
• forming an upper electrode on said multi-layer film, said upper electrode having electrode aperture portions corresponding to said insulation aperture portions,
• said multi-layer film being made to be non-single crystal on said non-single crystal insulation layer and single crystal on said exposed portions of said single crystal layer, and said multi-layer film including a conductive embedding layer above said non-single crystal insulation layer.

A method of fabricating a vertical-cavity surface-emitting laser, comprising the steps of:

• forming a single crystal layer above an active layer;
• forming a non-single crystal insulation layer on said single crystal layer;
• forming a plurality of insulation aperture portions in said insulation layer, to form exposed portions of said single crystal layer;
• growing a multi-layer film non-selectively on said insulation layer and said exposed portions of said single crystal layer to form a reflective mirror on a light-emitting side and a conductive embedding layer around the reflective mirror;
• and
• forming an upper electrode on said multi-layer film, said upper electrode having electrode aperture portions corresponding to said insulation aperture portions,
• said multi-layer film being made to be non-single crystal for said conductive embedding layer on said non-single crystal insulation layer and single crystal for said reflective mirror on said exposed portions of said single crystal layer.