Process flow and pellicle type for 157 nm mask making

A photomask to be used in photolithography for transferring a mask pattern by means of incident electromagnetic radiation within a preselected range of wavelengths comprising:

• a layer of material transparent to said preselected range of wavelengths, in which is formed, in the mask pattern to be transferred or its complement, regions opaque to the transmission of incident electromagnetic radiation of said preselected wavelength range, said opaque regions being regions of the transparent material stained by the deposition of singly positive gallium ions;
• a raised alignment boundary on said layer peripherally disposed about said mask pattern.

A photomask and pellicle to be used in photolithography for transferring a mask pattern by means of incident electromagnetic radiation within a preselected range of wavelengths comprising:

• a layer of material transparent to said preselected range of wavelengths, in which are formed, in the mask pattern to be transferred or its complement, regions opaque to the transmission of incident electromagnetic radiation of said preselected wavelength range, said opaque regions being trenches formed within the transparent material and filled by carbon atoms;
• a raised alignment boundary peripherally disposed about said mask pattern.