Dielectric element

A dielectric element comprising:

• an insulator film including an oxide-based dielectric film;
• and
• an electrode including a first conductor film containing at least Ir and silicon, wherein
• said first conductor film is formed by a multilayer structure of a conductor film containing Ir and silicon and a conductor film containing Ir, silicon and nitrogen.

A dielectric element comprising:

• an insulator film including an oxide-based dielectric film;
• and
• an electrode including a first conductor film consisting of Ir and silicon, wherein
• said electrode including said first conductor film is an upper electrode, wherein
• said upper electrode includes a plurality of layers, and
• at least the uppermost layer of said upper electrode is formed by said first conductor film.

A dielectric element, comprising:

• an insulator film including an oxide-based dielectric film;
• and
• an electrode including a first conductor film comprising Ir and silicon, wherein
• said electrode including said first conductor film is an upper electrode, wherein
• said upper electrode includes a plurality of layers, and
• at least the uppermost layer of said upper electrode is formed by said first conductor film, and wherein
• said upper electrode is formed by a multilayer structure of said first conductor film, containing Ir, silicon and nitrogen, forming said uppermost layer and a second conductor film containing Ir.