Back to results
US 6,720,031 B2Granted
Method of controlling the initial growth of CVD copper films by surface treatment of barrier metals films
AssigneeSharp Laboratories of America, Inc.
InventorsWei Pan, David Russell Evans, Sheng Teng Hsu
Life of this patent
Estimating the term…
Abstract
A method of chemical vapor deposition (CVD) of copper films includes preparing a substrate, including forming structures thereon have a barrier metal exposed surface; placing the prepared substrate into a CVD chamber; heating the substrate to a temperature of between about 200° C. and 250° C.; introducing a water flow in a carrier gas for at least one minute; stopping the water flow; and starting the flow of copper precursor.
Claims7
A method of chemical vapor deposition (CVD) of copper films comprising:
- preparing a substrate, including forming structures thereon have a barrier metal exposed surface;
- placing the prepared substrate into a CVD chamber;
- heating the substrate to a temperature of between about 200° C. and 250° C.;
- introducing a water flow in a carrier gas for at least one minute at a water flow of between about 0.005 ml/win and 0.010 ml/min;
- stopping the water flow;
- and
- starting the flow of copper precursor.
4 more elements
A method of chemical vapor deposition (CVD) of copper films comprising:
- preparing a substrate, including forming structures thereon have a barrier metal exposed surface;
- placing the prepared substrate into a CVD chamber;
- heating the substrate to a temperature of between about 200° C. and 250° C.;
- introducing a water flow of between about 0.005 ml/min and 0.010 ml/min, in a carrier gas for between about at least one minute and five minutes;
- stopping the water flow;
- and
- starting the flow of copper precursor.
4 more elements
Dependencies are inferred from the claim text.