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US 6,719,917 B2Granted
Method of ashing semiconductor device having metal interconnection
AssigneeSamsung Electronics Co., Ltd.
InventorSung-Dong Cho
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Abstract
A method for ashing a semiconductor device is provided. In the method, the semiconductor substrate, on which a metal interconnection and a photoresist pattern are formed, is processed using H2O, and then, by using a mixture of O2, N2, and H2O. The process is performed at least twice repeatedly. As a result, corrosion of the metal interconnection is inhibited and a bridge caused by conductive polymer is prevented.
Claims18
A method of ashing a semiconductor device, the method comprising:
- loading a semiconductor substrate including a metal interconnection and photoresist pattern into a chamber of an ashing apparatus having a plasma generator;
- injecting a passivating gas into the chamber;
- and
- injecting a stripping gas into the chamber,
- wherein injecting the passivating gas and injecting the stripping gas are carried out at least two times repeatedly.
2 more elements
A method of ashing a semiconductor device, the method comprising:
- loading a semiconductor substrate including a metal interconnection and photoresist pattern into a chamber of an ashing apparatus having a plasma generator;
- injecting a passivating gas into the chamber;
- and
- injecting a stripping gas into the chamber,
- re-injecting the passivating gas into the chamber;
- and
- re-injecting the stripping gas into the chamber.
4 more elements
Dependencies are inferred from the claim text.