Band gap plasma mass filter
AssigneeArchimedes Technology Group, Inc.
InventorTihiro Ohkawa
Life of this patent
Estimating the term…
Loading patent…
AssigneeArchimedes Technology Group, Inc.
InventorTihiro Ohkawa
Estimating the term…
A device and method for selectively establishing predetermined orbits, relative to an axis, for ions of a first mass/charge ratio (m1), requires crossing an electric field with a substantially uniform magnetic field (E×B). The magnetic field is oriented along the axis and the electric field has both a d.c. voltage component (∇Φ0) and an a.c. voltage component (∇Φ1). In operation, voltage Φ0 is fixed to place the ions m1 on confined orbits around the axis when Φ1 is zero. On the other hand, when Φ1 is tuned to a predetermined value, the ions m1 are ejected away from the axis. With E×B established in a chamber, the ions m1 will pass through the chamber when on confined orbits (Φ1=0), and they will be ejected into the wall of the chamber when on unconfined orbits (Φ1=predetermined value).
A band gap plasma filter for selectively passing ions of a first mass/charge ratio (m1) therethrough, wherein m1 is less than a predetermined cut off mass, Mc, said filter comprising:
A device for selectively establishing predetermined orbits for ions of a first mass/charge ratio (m1) relative to an axis, which comprises:
A method for selectively establishing predetermined orbits for ions of a first mass/charge ratio (m1) relative to an axis, which comprises the steps of:
Dependencies are inferred from the claim text.