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US 6,714,439 B2Granted
Semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorsHiroyuki Kobayashi, Mototsugu Hamada
Life of this patent
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Abstract
A semiconductor memory device according to an aspect of the present invention includes memory cells each having a data storage section which stores data and a transfer gate section which has a MOSFET of a first conductive type for writing the data to the data storage section and reading the data from the data storage section, wherein a potential corresponding to the data stored in the data storage section is applied as a substrate bias of the MOSFET.
Claims8
A semiconductor memory device comprising:
- a plurality of memory cells each comprising:
- a data storage section storing data;
- and
- a transfer gate section having a MOSFET of a first conductive type for writing said data to said data storage section and reading said data from said data storage section,
- wherein a potential corresponding to the data stored in said data storage section is applied as a substrate bias of said MOSFET.
2 more elements
Dependencies are inferred from the claim text.