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US 6,713,839 B2Granted
Antifuse structure with low resistance
AssigneeAirIP
InventorRaminda U. Madurawe
Life of this patent
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Abstract
An antifuse includes a grid having at least one n-well active stripe and at least one polysilicon stripe; a first oxide layer having a first oxide thickness, the first oxide layer adapted to electrically short the n-well active stripe with the polysilicon stripe; and a second oxide layer surrounding the first oxide and thicker than the first oxide layer.
Claims13
An antifuse, comprising:
- a grid having at least one n-well active stripe and at least one polysilicon stripe;
- a first oxide layer having a first oxide thickness, the first oxide layer adapted to electrically short the n-well active stripe with the polysilicon stripe;
- a second oxide layer surrounding the first oxide and thicker than the first oxide layer;
- and
- a metal strap coupled to one or more n-well active stripes with contacts placed at one or more predetermined locations to minimize n-well stripe resistance.
2 more elements
Dependencies are inferred from the claim text.