Back to results
US 6,713,837 B1Granted
Semiconductor device with fuse
AssigneeKabushiki Kaisha Toshiba
InventorsSadayuki Mori, Toshifumi Minami
Life of this patent
Estimating the term…
Abstract
A semiconductor device has a first conductor, a first insulating film formed on the first conductor, a columnar second conductor formed on the first conductor, and a third conductor formed on a top surface of the second columnar conductor and first insulating film. A second insulating film is formed on the third conductor and the first insulating film. The second insulating film is thinned above the second conductor. The second and third conductors form a fuse that is blown if irradiated with a laser beam. The fuse needs a small space, and a peripheral circuit related to the fuse is formed on one side of the fuse.
Claims33
A semiconductor device comprising:
- a first conductor;
- a first insulating film formed on said first conductor,
- a second conductor including a first plug and a second plug formed on said first conductor through said first insulating film;
- a third conductor including a first wire formed on said first insulating film and the first plug and a second wire formed on an extension line of the first wire on said first insulating film and the second plug;
- and
- a second insulating film formed on said third conductor and over said first insulating film, said second insulating film including a thin area over said second conductor for guiding a laser beam.
3 more elements
A semiconductor device comprising:
- a first insulating film;
- a first lower wire formed on said first insulating film;
- a second insulating film formed on said first lower wire;
- a first conductor formed through said second insulating film including a first portion formed on said first lower wire and a second portion formed on the first portion made of a different material from that of the first portion;
- a first upper wire formed parallel with said first lower wire on said second insulating film and said first conductor;
- and
- a third insulating film formed on said first upper wire and over said second insulating film, said third insulating film including a thin area over said first conductor for guiding a laser beam.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film formed on said semiconductor substrate;
- a first conductor formed on said semiconductor substrate through said first insulating film, including a first portion formed on said semiconductor substrate and a second portion formed on the first portion made of different material from that of the first portion;
- a first upper wire formed on said first insulating film and said first conductor;
- and
- a second insulating film formed on said first upper wire and over said first insulating film, said second insulating film including a thin area over said first conductor for guiding a laser beam.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film formed on said semiconductor substrate;
- first conductors formed on said semiconductor substrate through said first insulating film;
- first upper wires formed on said first insulating film and said first conductors alternated on two parallel lines such that ends of said first upper wires on one of the parallel lines oppose ends of said first upper wires on the other of the parallel lines;
- and
- a second insulating film formed on said first upper wires and over said first insulating film, said second insulating film including a thin area over said first conductors for guiding a laser beam,
- wherein said first conductors include first portions formed on said semiconductor substrate and second portions formed on the first portions made of different material from that of the first portions.
4 more elements
A semiconductor device comprising:
- a first insulating film;
- first lower wires formed on said first insulating film alternated on two parallel rows such that ends of said first lower wires on one of the parallel rows oppose ends of said first lower wires on the other of the parallel rows;
- a second insulating film formed on said first lower wires;
- first conductors formed on said first lower wires through said second insulating film;
- first upper wires formed parallel with said first lower wires on said second insulating film and said first conductors;
- and
- a third insulating film formed on said first upper wires and over said second insulating film, said third insulating film including a thin area over said first conductors for guiding a laser beam.
4 more elements
A semiconductor device comprising:
- a first insulating film;
- a first lower wire formed on said first insulating film;
- a second insulating film formed on said first lower wire;
- a first conductor formed on said first lower wire through said second insulating film;
- a second conductor formed on said first lower wire through said second insulating film;
- a first upper wire formed on said second insulating film and said first conductor;
- a second upper wire formed parallel with said first upper wire on said second insulating film and said second conductor;
- and
- a third insulating film formed on said first upper wire and said second upper wire and over said second insulating film, said third insulating film including a thin area over said first conductor and said second conductor for guiding a laser beam.
6 more elements
Dependencies are inferred from the claim text.