US 6,713,816 B1Granted

Electrostatic discharge device for integrated circuits

AssigneeFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

InventorsHeinrich Wolf, Wolfgang Wilkening

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Abstract

An ESD protection device for an integrated circuit, which is integrated in a semiconductor substrate of the integrated circuit, has a heavily doped p-region provided with a first connection electrode, a heavily doped n-region provided with a second connection electrode, a lightly doped p-region bordering on the heavily doped p-region, and a lightly doped n-region bordering on the heavily doped n-region and the lightly doped p-region in such a way that the lightly doped regions are arranged at least between the heavily doped regions. The distance which exists between the lightly doped p-region and the heavily doped n-region and which is determined by the lightly doped n-region is dimensioned in such a way that the depletion zone in the lightly doped n-region, which becomes larger as the blocking voltage applied to the connection electrodes increases, reaches the heavily doped n-region before the breakthrough voltage between the lightly doped n-region and the lightly doped p-region has been reached.

Claims4

Dependent claims

An ESD protection device for an integrated circuit which is integrated in a semiconductor substrate of said integrated circuit, comprising:

a heavily doped p-region provided with a first connection electrode;
a heavily doped n-region provided with a second connection electrode;
a lightly doped p-region bordering on said heavily doped p-region;
a lightly doped n-region bordering on said heavily doped n-region and said lightly doped p-region and having a first portion and a second portion;
and
a heavily doped n-layer;
wherein said heavily doped n-region, said first portion of said lightly doped n-region and said lightly doped p-region form a lateral sequence of differently doped semiconductor regions adjacent a surface of said substrate;
wherein said lightly doped p-region, said second portion of said lightly doped n-region and said heavily doped n-layer form a vertical sequence of differently doped semiconductor regions;
wherein a lateral distance which exists between said lightly doped p-region and said heavily doped n-region and which is determined by said first portion of said lightly doped n-region is adjusted to be less than a distance which exists between said lightly doped p-region and said heavily doped n-layer and which is determined by said second portion of said lightly doped n-region such that a lateral breakthrough occurs between said lightly doped p-region and said heavily doped n-region before a vertical breakthrough occurs between said lightly doped p-region and said heavily doped n-layer, as a blocking voltage applied to said first and second connection electrodes increases;
wherein said lightly doped p-region is implemented as a p-well around said heavily doped p-region;
wherein said p-well is surrounded by said lightly doped n-region;
and
wherein said lightly doped n-region is surrounded by a buried heavily doped n-layer.

10 more elements

An ESD protection device for an integrated circuit which is integrated in a semiconductor substrate of said integrated circuit, comprising:

a heavily doped n-region provided with a first connection electrode;
a heavily doped p-region provided with a second connection electrode;
a lightly doped n-region bordering on said heavily doped n-region;
and
a lightly doped p-region bordering on said heavily doped p-region and said lightly doped n-region and having a first portion and a second portion;
and
a heavily doped p-layer;
wherein said heavily doped p-region, said first portion of said lightly doped p-region and said lightly doped n-region form a lateral sequence of differently doped semiconductor regions adjacent a surface of said substrate;
wherein said lightly doped n-region, said second portion of said lightly doped p-region and said heavily doped p-layer form a vertical sequence of differently doped semiconductor regions;
wherein a lateral distance which exists between said lightly doped n-region and said heavily doped p-region and which is determined by said first portion of said lightly doped p-region is adjusted to be less than a distance which exists between said lightly doped n-region and said heavily doped p-layer and which is determined by said second portion of said lightly doped p-region such that a lateral breakthrough occurs between said lightly doped n-region and said heavily doped p-region before a vertical breakthrough occurs between said lightly doped n-region and said heavily doped p-layer, as a blocking voltage applied to said connection electrodes increases;
wherein said lightly doped n-region is implemented as an n-well around said heavily doped n-region;
wherein said n-well is surrounded by said lightly doped p-region;
and
wherein said lightly doped p-region is surrounded by a buried heavily doped p-layer.

11 more elements

Dependencies are inferred from the claim text.