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US 6,713,808 B2Granted
Semiconductor capacitor with diffusion prevention layer
AssigneeFujitsu Limited
InventorsWensheng Wang, Mitsushi Fujiki, Ko Nakamura
Life of this patent
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Abstract
There is provided the capacitor which has the lower electrode having a structure in which the first conductive layer containing a first metal, the second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and the third conductive layer that is formed on the second conductive layer and made of the third metal different from the first metal are formed sequentially; the dielectric layer formed on the lower electrode; and the upper electrode formed on the capacitor dielectric layer.
Claims25
A capacitor comprising:
- a lower electrode having a structure in which a first conductive layer containing a first metal, a second conductive layer that is formed on the first conductive layer and made of a metal oxide of a second metal except iridium or ruthenium different from said first metal, and a third conductive layer formed on said second conductive layer and made of a third metal except iridium or ruthenium different from said first metal, are formed sequentially on an insulating layer;
- a capacitor dielectric layer formed on said lower electrode;
- and
- an upper electrode formed on said capacitor dielectric layer.
1 more element
A semiconductor device comprising:
- a transistor formed on a semiconductor substrate, and having a gate electrode and source/drain diffusion layers formed in said semiconductor substrate on both sides of said gate electrode;
- an insulating layer for covering said transistor;
- an electrode plug buried in said insulating layer and connected electrically to said source/drain diffusion layer;
- and
- a capacitor formed on said electrode plug, and having a lower electrode that has a first conductive layer containing iridium or ruthenium, a second conductive layer formed on said first conductive layer and made of a metal oxide of a platinum group metal except iridium or ruthenium and a third conductive layer formed on said second conductive layer and made of a metal of said platinum group except iridium or ruthenium, a capacitor dielectric layer that is formed on said lower electrode by sputtering, and an upper electrode that is formed on said capacitor dielectric layer, and said lower electrode is connected electrically to said electrode plug.
2 more elements
A semiconductor device comprising:
- a transistor formed on a semiconductor substrate, and having a gate electrode and source/drain diffusion layers formed in the semiconductor substrate on both sides of the gate electrode;
- an insulating layer for covering said transistor;
- an electrode plug buried in said insulating layer and connected electrically to said source/drain diffusion layer;
- and
- a capacitor formed on said electrode plug, and having a lower electrode that has a first conductive layer containing iridium or ruthenium for preventing diffusion of oxygen, a second conductive layer formed on said first conductive layer made of a metal of a platinum group except iridium or ruthenium for preventing diffusion of said iridium or ruthenium from said first conductive layer and a third conductive layer formed on said second conductive layer and made of a metal of a platinum group except iridium or ruthenium, a capacitor dielectric layer formed on said lower electrode by sputtering, and an upper electrode formed on said capacitor dielectric layer, and said lower electrode is connected electrically to said electrode plug.
2 more elements
A capacitor comprising:
- a lower electrode having a structure in which a first conductive layer containing a first metal, a second conductive layer formed on said first conductive layer and made of a metal oxide of a second metal except iridium or ruthenium, and a third conductive layer formed on said second conductive layer and made of said second metal, except iridium or ruthenium, are formed sequentially on an insulating layer;
- a capacitor dielectric layer formed on said lower electrode;
- and
- an upper electrode formed on said capacitor dielectric layer.
1 more element
Dependencies are inferred from the claim text.