Substrate processing apparatus and substrate processing method
AssigneeTokyo Electron Limited
InventorHirofumi Moriyama
Life of this patent
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Abstract
A humidifying heat treating unit for heating a wafer W having a coated film such as a dielectric film formed thereon under a humidified atmosphere comprises a hot plate for heating the wafer W, a chamber having a plurality of blocks, and provided with a gas supply port for supplying a humidified gas into the chamber and an exhaust port exhausting the chamber for every block, and a control section for controlling the supply-exhaust of the humidified gas into and out of the chamber. The control section controls the supply-exhaust of the humidified gas for every block.
Claims4
A substrate processing method for applying a prescribed processing to a substrate held under a prescribed gaseous atmosphere, comprising:
- the step of housing a substrate in a chamber having a plurality of blocks and provided with a gas supply port and a gas exhaust port mounted for every block;
- and
- the step of processing a substrate by optionally carrying out for every block a gas supply processing for supplying a gas containing a prescribed vapor into said chamber through said gas supply port and an exhaust processing within said chamber through said gas exhaust port.
Dependencies are inferred from the claim text.