Manufacturing method of semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorYasutaka Kobayashi
Life of this patent
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Abstract
A gate electrode layer formed on a semiconductor substrate is etched. A gate electrode is formed while forming metal system sub-products onto the side walls of the gate electrode layer. The metal system sub-products formed on the side walls of the gate electrode layer are oxidized. The oxidized metal system sub-products are removed by a solution whose etching rate for the gate insulative film has been adjusted to 10 Å/min or less.
Claims21
A manufacturing method of a semiconductor device in which a gate electrode, at least a part of which is made of a metal material, is formed on a gate insulative film formed on a semiconductor substrate, comprising:
- forming the gate electrode while forming metal system sub-products onto side walls of said gate electrode, by etching a gate electrode layer formed on said semiconductor substrate;
- oxidizing said metal system sub-products formed on the side walls of said gate electrode;
- and
- removing said oxidized metal system sub-products using a solution having an etching rate for said gate insulative film adjusted to be equal to or less than 10 Å/min.
A manufacturing method of a semiconductor device in which a gate electrode, at least a part of which is made of a metal material, is formed on a gate insulative film formed on a semiconductor substrate, comprising:
- sequentially forming the gate insulative film, a gate electrode layer, and a silicon nitride film or a silicon oxide film onto said semiconductor substrate, at least a part of said gate electrode layer is made of a metal material;
- etching said silicon nitride film or silicon oxide film into a predetermined shape;
- forming the gate electrode while forming metal system sub-products onto side walls of said gate electrode, by etching said gate electrode layer using said silicon nitride film or silicon oxide film etched in said predetermined shape as a mask;
- oxidizing said metal system sub-products formed on the side walls of said gate electrode;
- and
- removing said oxidized metal system sub-products.
A manufacturing method of a semiconductor device having a gate electrode which is formed on a gate oxide film on a semiconductor substrate and which has a metal material layer, comprising:
- depositing a gate electrode layer for said gate electrode onto said gate oxide film;
- forming a reflection preventing film layer and a photoresist material layer made of an organic material sequentially onto said gate electrode layer;
- forming a resist mask in a desired shape from said photoresist material layer by a photolithography technique;
- performing a selective etching process on said reflection preventing film layer using said resist mask, thereby forming an etching mask corresponding to said resist mask from said reflection preventing film layer;
- removing said resist mask;
- performing an etching process using said etching mask after said removing said resist mask, to remove a portion of said gate electrode layer exposed from said etching mask, and sequentially growing etching protective films of a metal system onto side portions of said gate electrode that remain after removal of said gate electrode layer;
- oxidizing said etching protective films;
- and
- removing said oxidized etching protective films from the side portions of said gate electrode.
Dependencies are inferred from the claim text.