Vapor treatment for repairing damage of low-k dielectric
AssigneeAdvanced Micro Devices, Inc.
InventorsSuzette K. Pangrle, Ecran Adem, Calvin Gabriel, Lynne A. Okada
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Abstract
A method of manufacturing a semiconductor device includes forming a first level, forming a first barrier layer over the first level, forming a dielectric layer over the first barrier layer, forming an opening having side surfaces through the dielectric layer, etching the first barrier layer, and filling the opening with metal to form a first metal feature. The process also includes the step of replacing hydroxyl terminated ions on the side surfaces. This step of replacing the hydroxyl terminated ions can occur after the opening is formed or after the first barrier layer is etched. A semiconductor device produced by the method of manufacturing is also disclosed.
Claims10
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first level;
- forming a first barrier layer over the first level;
- forming a dielectric layer over the first barrier layer;
- forming an opening having side surfaces through the dielectric layer;
- etching the first barrier layer to expose the first level;
- replacing hydroxyl terminated ions on the side surfaces using plasma etching;
- and
- filling the opening with metal to form a first feature, wherein the plasma etching is performed using a species selected from the group consisting of CH3OH, C2H5OH, CH4, and C2H6.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first level;
- forming a first barrier layer over the first level;
- forming a dielectric layer over the first barrier layer;
- forming an opening having side surfaces through the dielectric layer;
- etching the first barrier layer to expose the first level;
- replacing hydroxyl terminated ions on the side surfaces;
- and
- filling the opening with metal to form a first feature, wherein the hydroxyl terminated ions are replaced by ions selected from the group consisting of OCH3, OC2H5, OCH3, and OCH2CH3.
A method of treating a dielectric layer, comprising the steps of:
- etching a feature into a dielectric layer, the feature having side surfaces;
- and
- treating the feature surfaces to replace hydroxyl terminated ions on the side surfaces with a species that reduces hygroscopy of the feature side surfaces using plasma etching, wherein the plasma etching is performed using a species selected from the group consisting of CH3OH, C2H5OH, CH4, and C2H6.
Dependencies are inferred from the claim text.