Antifuse incorporating tantalum nitride barrier layer
AssigneeActel Corporation
InventorsJeewika Ranaweera, Roy Lambertson
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Abstract
A method for forming a metal-to-metal antifuse disposed above and insulated from a semiconductor substrate is disclosed. The method comprises forming a first metal layer disposed above and insulated from the semiconductor substrate; forming a layer of antifuse material over and in electrical contact with the first metal layer; forming a second metal layer over and in electrical contact with the layer of antifuse material; and forming at least one barrier layer comprising a layer of TaN between the layer of antifuse material and one of the first and second metal layers.
Claims7
A method for forming a metal-to-metal antifuse disposed above and insulated from a semiconductor substrate, comprising:
- forming a first metal layer disposed above and insulated from the semiconductor substrate;
- forming a layer of antifuse material over and in electrical contact with said first metal layer;
- forming a second metal layer over and in electrical contact with said layer of antifuse material;
- and
- forming at least one barrier layer comprising a layer of TaN between said layer of antifuse material and said first metal layers.
A method for fabricating a metal-to-metal antifuse comprising:
- forming a first metal electrode disposed above and insulated from the semiconductor substrate;
- forming a first insulating layer over said first metal electrode;
- forming a via in said first insulating layer and forming and planarizing a metal plug therein;
- forming a layer of antifuse material over and in electrical contact with said metal plug;
- forming a barrier layer comprising a layer of TaN over said layer of antifuse material;
- defining said layer of antifuse material and said barrier layer;
- forming a second insulating layer over said layer of antifuse material and said barrier layer and forming a via therein;
- and
- forming a second metal electrode over said second insulating layer and in said via in electrical contact with said barrier layer.
A method for fabricating a metal-to-metal antifuse comprising:
- forming a first metal electrode disposed above and insulated from the semiconductor substrate;
- forming a barrier layer comprising a layer of TaN over said first metal electrode;
- forming a layer of antifuse material over said barrier layer;
- defining said barrier layer and said layer of antifuse material;
- forming an insulating layer over said barrier layer and said layer of antifuse material;
- forming a via in said insulating layer and forming and planarizing a metal plug therein;
- and
- forming a second metal electrode over said insulating layer and in said via in electrical contact with said metal plug.
Dependencies are inferred from the claim text.