Method of manufacturing a semiconductor integrated circuit device
AssigneeHitachi, Ltd.
InventorsTakayuki Kanda, Atsushi Hiraiwa, Norio Suzuki, Satoshi Sakai, Shuji Ikeda, Yasuko Yoshida, Shinichi Horibe
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Abstract
A protection film is formed on a silicon oxide film 6 formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.
Claims38
A method of manufacturing a semiconductor integrated circuit device by forming an insulating film of a first thickness on a first active region of a semiconductor substrate and forming an insulating film of a second thickness smaller than said first thickness on a second active region, said method comprising the steps of:
- (a) forming a first insulating film on the surface of said semiconductor substrate;
- (b) forming a second insulating film on said first insulating film;
- (c) covering said first active region with a masking pattern;
- (d) successively removing said second insulating film and said first insulating film from said second active region by using said masking pattern as a mask;
- (e) selectively removing chiefly said second insulating film from said first active region after said masking pattern has been removed;
- and
- (f) forming a third insulating film on said semiconductor substrate.
A method of manufacturing a semiconductor integrated circuit device by forming an insulating film of a first thickness on a first active region of a semiconductor substrate and forming an insulating film of a second thickness smaller than said first thickness on a second active region, said method comprising the steps of:
- (a) forming a first insulating film on the surface of said semiconductor substrate;
- (b) forming a second insulating film on said first insulating film after the surface of said first insulating film has been removed by not more than about 1 nm;
- (c) covering said first active region with a masking pattern;
- (d) successively removing said second insulating film and said first insulating film from said second active region by using said masking pattern as a mask;
- (e) selectively removing said second insulating film from said first active region after said masking pattern has been removed;
- and
- (f) forming a third insulating film on said semiconductor substrate.
A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:
- (a) forming a first insulating film on the surface of a semiconductor substrate;
- (b) forming a second insulating film on said first insulating film;
- (c) forming a masking pattern on said semiconductor substrate so as to cover a first region where an insulating film having a relatively large thickness will be formed but not covering a second region where an insulating film having a relatively small thickness will be formed other than said first region;
- (d) successively removing said second insulating film and said first insulating film from said second active region by using said masking pattern as a mask;
- (e) after said masking pattern has been removed, removing said second insulating film by washing said semiconductor substrate, said second insulating film being used for suppressing said first insulating film from being scraped off;
- and
- (f) forming a third insulating film on said semiconductor substrate in order to form an insulating film of a first relatively large thickness on said first region and to form an insulating film of a second relatively small thickness on said second region.
A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:
- (a) forming a first insulating film on the surface of a semiconductor substrate having a first active region and a second active region;
- (b) forming a second insulating film on said first insulating film;
- (c) successively removing said second insulating film and said first insulating film from said second active region;
- (d) washing said semiconductor substrate after said step (c);
- (e) forming a third insulating film on said semiconductor substrate after said step (d) to form an insulating film of a first relatively large thickness on said first active region and to form an insulating film of a second relatively small thickness on said second activating region;
- wherein in effecting the washing in said step (d), the rate for etching said second insulating film is larger than the rate for etching said first insulating film, and said second insulating film is removed from said second active region.
A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:
- (a) forming a first insulating film on the surface of a semiconductor substrate having a first active region and a second active region;
- (b) forming an insulating film serving as a protection film serving as a protection film on said first insulating film;
- (c) successively removing said insulating film serving as a protection film and said first insulating film from said second active region;
- (d) washing said semiconductor substrate after said step (c);
- and
- (e) forming a second insulating film on said semiconductor substrate after said step (d) to form an insulating film of a first relatively large thickness on said first active region and to form an insulating film of a second relatively small thickness on said second active region.
Dependencies are inferred from the claim text.