Methods of forming switchable circuit devices

A method of forming a switchable circuit device, comprising

• providing a semiconductive material substrate;
• forming at least one n-type doped region within the substrate and beneath an uppermost surface of the substrate;
• forming at least one porous matrix over the at least one n-type doped region;
• providing an active molecular switchable memory material within the pores of the at least one porous matrix;
• and
• forming a conductive line over and in electrical contact with the at least one porous matrix having the switchable memory material therein.

A method of forming a switchable circuit device, comprising

• forming a mass over a substrate;
• while the mass is over the substrate, forming pores within the mass to convert the mass to a porous matrix;
• providing a mixture of active molecular switchable memory material within liquid carrier;
• providing the mixture within the pores of the porous matrix material;
• volatilizing the carrier from within the pores to leave the active molecular switchable memory material remaining within the pores;
• providing an active molecular switchable memory material within the pores of the porous matrix;
• and
• forming an electrical connection to the porous matrix having the switchable memory material therein.

A method of forming a switchable circuit device, comprising;

• providing a semiconductor substrate;
• forming a first conductive wiring layer supported by the substrate;
• forming porous silicon over the conductive wiring layer;
• providing an active molecular switchable memory material within pores of the porous silicon;
• and
• forming a second conductive wiring layer over the porous silicon and over the active molecular switchable memory material within the pores of the porous silicon.

A method of forming a semiconductor construction, comprising:

• providing a semiconductor substrate;
• forming an electrically insulative material over the semiconductor substrate;
• forming trenches extending into the electrically insulative material;
• forming a first conductive wiring layer within the trenches to partially fill the trenches;
• forming porous silicon over the first conductive wiring layer within the trenches;
• providing an active molecular switchable memory material within pores of the porous silicon;
• forming a planarized upper surface extending across an uppermost portion of the porous silicon and across an uppermost portion of the insulative material;
• and
• forming a second conductive wiring layer over the planarized upper surface.