Method for fabricating a semiconductor apparatus including a sealing member with reduced thermal stress
AssigneeOki Electric Industry Co., Ltd.
InventorTakashi Ohsumi
Life of this patent
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Abstract
A method of fabricating a semiconductor apparatus includes forming a base member and a conductive layer on a first surface of a semiconductor substrate. The conductive layer has an extended portion that extends onto the base member. A first surface of the semiconductor substrate is placed to face a connection substrate, the extended portion of the conductive layer is then connected to the connection substrate, and a seal member is supplied in a space between the semiconductor substrate and the connection substrate.
Claims3
A method for fabricating a semiconductor apparatus, comprising:
- fabricating a semiconductor substrate having a first surface in which a semiconductor integrated circuit is formed,
- the semiconductor substrate including a conductive layer formed on the first surface thereof which is connected to the semiconductor integrated circuit and including a base member of insulating material arranged between the first surface and the conductive layer,
- the base member including a first surface facing the first surface of the semiconductor substrate and a second surface opposite the first surface of the base member,
- the conductive layer having an extended portion extending on the second surface of the base member;
- providing a connection substrate on which the semiconductor substrate is to be mounted;
- placing the semiconductor substrate so that the first surface of the semiconductor substrate faces the connection substrate;
- connecting the extended portion of the conductive layer to the connection substrate;
- and
- supplying a seal member in a space between the semiconductor substrate and the connection substrate,
- wherein the base member and the seal member are made of a same material having a same thermal expansion coefficient.
A method for fabricating a semiconductor apparatus comprising:
- forming a semiconductor integrated circuit on a first surface of a semiconductor substrate;
- forming a base member of insulating material on the first surface of the semiconductor substrate;
- forming a conductive layer on the first surface of the semiconductor substrate, the conductive layer being connected to the semiconductor integrated circuit and having an extended portion that extends onto a top surface of the base member;
- placing the first surface of the semiconductor substrate having the semiconductor integrated circuit, the base member and the conductive layer thereon as facing a connection substrate;
- connecting the extended portion of the conductive layer to the connection substrate;
- and
- supplying a sealing member in a space between the semiconductor substrate and the connection substrate, after said connecting,
- wherein the base member and the sealing member are a same material.
Dependencies are inferred from the claim text.