Static random access memory cell and method
AssigneeTexas Instruments Incorporated
InventorTheodore W. Houston
Life of this patent
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Abstract
A method for forming a scaled static random access memory (SRAM) cell (10) based on an initial SRAM cell for implementation in a technology scaled from an initial technology. The SRAM cells comprise a plurality of transistors. The method comprises determining a reduction in a minimum gate length (46) for the scaled transistors (14, 16, 18) as compared to a minimum gate length for the initial transistors. The method also comprises forming a scaled drive transistor (16) comprising a gate having a gate length (54) reduced as compared to a gate length for an initial drive transistor. The scaled gate length (54) is reduced by less than the determined reduction in the minimum gate length (46).
Claims12
A method for forming a scaled static random access memory (SRAM) cell based on an initial SRAM cell for implementation in a technology scaled from an initial technology, the SRAM cells comprising a plurality of transistors, the method comprising:
- determining a reduction in a minimum gate length for the scaled transistors as compared to a minimum gate length for the initial transistors;
- and
- forming a scaled drive transistor comprising a gate having a gate length reduced as compared to a gate length for an initial drive transistor, the scaled gate length reduced by less than the determined reduction in the minimum gate length.
A method for forming a scaled SRAM cell, the method comprising:
- scaling a pass transistor comprising a gate from a first gate length to a second gate length, the second gate length a specified percentage of the first gate length;
- and
- scaling a drive transistor comprising a gate from a first gate length to a second gate length, the second gate length a specified percentage of the first gate length, the specified percentage for the drive transistor greater than the specified percentage for the pass transistor.
Dependencies are inferred from the claim text.