Semiconductor device, including an arrangement to provide a uniform press contact and converter using same
AssigneeHitachi, Ltd.
InventorsHironori Kodama, Mitsuo Katou, Mamoru Sawahata
Life of this patent
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Abstract
In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on a respective main plane of the semiconductor element and a main electrode plate.
Claims5
A power converter using a press contact type semiconductor device as a main converting element, wherein said semiconductor device comprises:
- a pair of main electrode plates;
- at least a semiconductor element assembled in an interval between said pair of main electrode plates, which comprises:
- at least a first main electrode on a first main plane, and
- a second main electrode on a second main plane;
- and
- a metallic body having macroscopic vacancies in its internal portion, being arranged between one of the first and second main electrodes of said semiconductor element and one of said main electrode plates.
A power converter using a press contact type semiconductor device as a main converting element, wherein said semiconductor device comprises:
- a pair of main electrode plates,
- at least a semiconductor element assembled in an interval between said pair of main electrode plates, which comprises:
- at least a first main electrode on a first main plane, and
- a second main electrode on a second main plane;
- a conductive intermediate electrode plate arranged between one of the main electrodes of said semiconductor element and one of the main electrode plates facing to the main electrode of said semiconductor element, and
- a metallic body having macroscopic vacancies in its internal portion, being arranged between said intermediate electrode plate and said one of the main electrode plates.
A power converter using a press contact type semiconductor device as a main converting element, wherein said semiconductor device comprises:
- a pair of main electrode plates;
- at least a semiconductor element assembled in an interval between said pair of main electrode plates, which comprises:
- at least a first main electrode on a first main plane, and
- a second main electrode on a second main plane;
- and
- any one selected from the group consisting of metallic netting, metallic plate manufactured to be uneven, and porous metallic plate, being arranged between said semiconductor element and one of said main electrode plates.
A power converter using a press contact type semiconductor device as a main converting element, wherein said semiconductor device comprises:
- a pair of main electrode plates,
- at least a semiconductor element assembled in an interval between said pair of main electrode plates, which comprises:
- at least a first main electrode on a first main plane, and
- a second main electrode on a second main plane;
- a conductive intermediate electrode plate arranged between one of the first and second main electrodes of said semiconductor element and one of the main electrode plates facing to the one of the main electrodes of said semiconductor element, and
- any one selected from the group consisting of metallic netting, metallic plate manufactured to be uneven, and porous metallic plate, being arranged between said intermediate electrode plate and said one of the main electrode plates.
Dependencies are inferred from the claim text.