Semiconductor device provided with fuse and method of disconnecting fuse
AssigneeFujitsu Limited
InventorsTsutomu Tatematsu, Kengi Togashi, Masayuki Nakada, Toyoji Sawada, Kazuo Sukegawa, Tomoyuki Yamada, Yoshikazu Arisaka
Life of this patent
Estimating the term…
Abstract
A high-strength protective member made of tungsten is disposed under a disconnecting point of a fuse. This protective member is formed simultaneously with formation of a via contact portion which connects the fuse with wiring, for example.
Claims13
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film formed on the semiconductor substrate;
- lower wiring formed on the first insulating film;
- a second insulating film formed on both of the first insulating film and the lower wiring;
- a fuse formed on the second insulating film;
- a via contact portion formed inside the second insulating film to connect the fuse and the lower wiring electrically;
- and
- a protective member formed of a stronger material than that of the second insulating film and disposed under the fuse with the fuse contacting the protective member.
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film formed on the semiconductor substrate;
- a fuse formed on the first insulating film;
- a protective member formed of a stronger material than that of the first insulating film and disposed under the fuse with the fuse contacting the protective member;
- a second insulating film formed on both of the first insulating film and the fuse;
- wiring formed on the second insulating film;
- and
- a via contact portion formed inside the second insulating film to connect the fuse and the wiring electrically, the protective member being made of the same material as that of the via contact portion.
A method of disconnecting a fuse of a semiconductor device, the semiconductor device including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, wiring formed on the first insulating film, a second insulating film formed on both of the first insulating film and the wiring, a fuse formed on the second insulating film, a via contact portion formed inside the second insulating film to connect the fuse and the wiring electrically, and a plurality of protective members formed by stronger material than the second insulating film and disposed separately from one another under the fuse,
- wherein the fuse is disconnected by irradiating a laser onto at least one portion directly above the protective member out of the plurality of protective members.
A method of disconnecting a fuse of a semiconductor device, the semiconductor device including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, wiring formed on the first insulating film, a second insulating film formed on both of the first insulating film and the wiring, a fuse formed on the second insulating film, a via contact portion formed inside the second insulating film to connect the fuse and the wiring electrically, and a plurality of protective members formed by stronger material than the second insulating film and disposed separately from one another under the fuse,
- wherein the fuse is disconnected by irradiating a laser onto a portion of the fuse between the plurality of protective members.
A method of forming a semiconductor device, comprising:
- forming a semiconductor substrate;
- forming a first insulating film on the semiconductor substrate;
- forming lower wiring on the first insulating film;
- forming a second insulating film on both the first insulating film and the lower wiring;
- forming a fuse on the second insulating film;
- forming a via contact portion inside the second insulating film to electrically connect the fuse and the lower wiring;
- and
- forming a protective member, of a stronger material than that of the second insulating film, under the fuse with the fuse contacting the protective member.
Dependencies are inferred from the claim text.