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US 6,686,643 B2Granted
Substrate with at least two metal structures deposited thereon, and method for fabricating the same
AssigneeInfineon Technologies AG
InventorsSiegfried Schwarzl, Werner Pamler, Zvonimir Gabric
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Abstract
Metal structures that can be produced by a damascene process are disposed in a first insulating layer and a second insulating layer is disposed above the latter. There is in each case at least one cavity which is disposed between the metal structures, is disposed in the first insulating layer and is covered by the second insulating layer. The cavities and the metal structures are produced next to one another by self-aligned process steps.
Claims6
A semiconductor structure, comprising:
- a substrate;
- a first insulating layer disposed on said substrate and having cavities formed therein, said cavities being separated by said first insulating layer from said substrate and not extending to said substrate;
- a second insulating layer having an upper horizontal surface, composed of a different material than said first insulating layer, and disposed on said first insulating layer, covering said cavities and
- at least two metal structures disposed spaced apart from one another in said first insulating layer and each having an upper horizontal surface lying level with said upper horizontal surface of said second insulating layer, and said cavities not adjoining said metal structures and at least one of said cavities disposed between said at least two metal structures.
1 more element
Dependencies are inferred from the claim text.