SOI MOSFETS exhibiting reduced floating-body effects

A thin film silicon-on-insulator semiconductor device comprising:

• a layer of semiconductor material;
• a buried insulation layer located above the layer of semiconductor material;
• a semiconductor SOI layer of a first conductivity type located above the buried insulation layer;
• a gate insulating layer located above preselected portions of the semiconductor SOI layer;
• a gate conductor located above the gate insulating layer;
• source and drain regions of a second conductivity type opposite from the conductivity type of the semiconductor SOI layer;
• shallow source and drain extensions of the second conductivity type;
• and
• a pocket halo implant of indium disposed beneath the gate insulating layer and contacting the gate insulating layer, wherein a portion of the semiconductor SOI layer is disposed between the pocket halo implant and the buried insulation layer such that the pocket halo implant is out of contact with the buried insulation layer and wherein the shallow source and drain extensions extend above a portion of the pocket halo implant and only partly through a thickness of the semiconductor SOI layer in a channel region of the semiconductor SOI layer.