Field effect-controllable semiconductor component with two-directional blocking, and a method of producing the semiconductor component
AssigneeInfineon Technologies AG
InventorJenoe Tihanyi
Life of this patent
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Abstract
The semiconductor component can be controlled by the field effect and it blocks in both directions. The component has a semiconductor body with a first connecting zone, a second connecting zone and a channel zone formed between the first and the second connecting zone. A control electrode is formed adjacent to the channel zone such that it is isolated from the semiconductor body. In order to avoid a reduction in the withstand voltage due to a parasitic bipolar transistor, a recombination zone, which is formed from a material that assists the recombination of charge carriers of the first and second conductivity types, is formed in the channel zone and the second connecting zone.
Claims15
A field effect-controlled semiconductor component, comprising:
- a semiconductor body having a first connecting zone and a second connecting zone of a first conductivity type, and having a channel zone of a second conductivity type formed between said first connecting zone and said second connecting zone;
- a control electrode adjacent said channel zone and isolated from said semiconductor body;
- and
- a recombination zone disposed in a trench extending into said semiconductor body in said channel zone and in said second connecting zone and having a recombination material assisting in a recombination of charge carriers of the first and the second conductivity types, said trench being at least partially filled with a recombination material.
Dependencies are inferred from the claim text.