Nitrogen-based highly polymerizing plasma process for etching of organic materials in semiconductor manufacturing
AssigneeInternational Business Machines Corporation
InventorsGregory Costrini, Peter D. Hoh, Richard S. Wise, Wendy Yan
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Abstract
A method of etching an organic antireflective film layer underlying a patterned resist layer on a semiconductor substrate by contacting the exposed organic film with a fluorocarbon and nitrogen etchant in the presence of a plasma-generated energy and removing exposed areas of the organic film with the etchant. An oxide layer underlying the organic film layer is substantially undamaged after contact with the etchant. The plasma is a high density plasma and preferably contains argon, C4F8, and nitrogen.
Claims23
A method of etching an organic film layer underlying a patterned resist layer on a semiconductor substrate, the method comprising:
- providing a substrate having an organic film layer and a patterned resist layer overlying said organic film layer, the patterned resist layer having spaces exposing areas of the organic film layer, the organic film layer and the resist layer being of differing composition from each other;
- contacting the exposed organic film with an etchant comprising C4F8 and nitrogen and absent an oxidant addition, said etchant in the presence of a high density plasma-generated energy;
- and
- removing exposed areas of the organic film with the etchant wherein a layer underlying said organic film is substantially undamaged after contact with said etchant.
A method of etching an organic film layer underlying a patterned resist layer on a semiconductor substrate, the method comprising:
- providing a substrate;
- depositing on the substrate an organic film layer;
- depositing on the organic film layer a resist layer, the resist layer and the organic film layer being of differing composition from each other;
- patterning the resist layer and creating spaces exposing areas of the organic film layer;
- contacting the exposed organic film with an etchant comprising C4F8, a noble gas and nitrogen and absent an oxidant addition, said etchant in the presence of high density plasma-generated energy;
- and
- removing exposed areas of the organic film with the etchant wherein a layer underlying said organic film is substantially undamaged after contact with said etchant.
A method of etching an organic film layer underlying a patterned resist layer on a semiconductor substrate, the method comprising:
- providing a substrate;
- depositing on the substrate an organic film layer;
- depositing on the organic film layer a resist layer, the resist layer and the organic film layer being of differing composition from each other;
- patterning the resist layer and creating spaces exposing areas of the organic film layer;
- contacting the exposed organic film with an etchant comprising about 50 to 95 volume percent argon, about 5 to 40 volume percent C4F8, and the balance nitrogen in the presence of high density plasma-generated energy;
- and
- removing exposed areas of the organic film with the etchant.
A method of etching an organic film layer underlying a patterned resist layer on a semiconductor substrate, the method comprising:
- providing a substrate having, in sequence, an oxide layer, organic film layer and a patterned resist layer overlying said organic film layer, the patterned resist layer having spaces exposing areas of the organic film layer, the organic film layer and the resist layer being of differing composition from each other;
- contacting the exposed organic film with an etchant comprising a fluorocarbon and nitrogen in the presence of a plasma-generated energy;
- and
- removing exposed areas of the organic film with the etchant;
- wherein the etchant removes substantially all of the organic film in the area contacted by the etchant and exposes an area of the oxide layer, and wherein the oxide layer is substantially undamaged after contact with the etchant.
A method of etching an organic film layer underlying a patterned resist layer on a semiconductor substrate, the method comprising:
- providing a substrate having an oxide layer deposited therein;
- depositing on the oxide layer an organic film layer;
- depositing on the organic film layer a resist layer, the resist layer and the organic film layer being of differing composition from each other;
- patterning the resist layer and creating spaces exposing areas of the organic film layer;
- contacting the exposed organic film with an etchant comprising a fluorocarbon, a noble gas and nitrogen in the presence of high density plasma-generated energy;
- and
- removing exposed areas of the organic film with the etchant;
- wherein the etchant removes substantially all of the organic film in the area contacted by the etchant and exposes an area of the oxide layer, and the oxide layer is substantially undamaged after contact with the etchant.
A method of etching an organic film layer underlying a patterned resist layer on a semiconductor substrate, the method comprising:
- providing a substrate having an organic film layer and a patterned resist layer overlying said organic film layer, the patterned resist layer having spaces exposing areas of the organic film layer, the organic film layer and the resist layer being of differing composition from each other;
- contacting the exposed organic film with an etchant comprising about 50 to 95 volume percent argon, about 5 to 40 volume percent C4F8, and the balance nitrogen in the presence of a plasma-generated energy;
- and
- removing exposed areas of the organic film with the etchant.
Dependencies are inferred from the claim text.