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US 6,686,277 B1Granted
Method of manufacturing semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorKaori Tai
Life of this patent
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Abstract
A refractory metal film is formed over a semiconductor substrate, and a first nitride film is formed over the refractory metal film. Thereafter, the refractory metal film and the nitride film are patterned and the sides of the patterned refractory metal film are nitrided.
Claims12
A method of manufacturing a semiconductor device, comprising:
- forming a film comprised of a refractory metal over a semiconductor substrate;
- forming a first nitride film over the refractory metal film;
- patterning the refractory metal film and the first nitride film;
- nitriding the sides of the patterned refractory metal film;
- and
- forming nitride side walls on the nitrided sides of the patterned refractory metal film and on the patterned first nitride film,
- said forming nitride side walls comprises a reduced pressure CVD process carried out at 780° C.
4 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a film comprised of a refractory metal over a semiconductor substrate;
- forming a first nitride film over the refractory metal film;
- patterning the refractory metal film and the first nitride film;
- nitriding the sides of the patterned refractory metal film;
- and
- forming nitride side walls on the nitrided sides of the patterned refractory metal film and on the patterned first nitride film,
- said nitriding the sides of the patterned refractory metal film is executed according to a plasma nitriding process using ammonia.
4 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulator over a semiconductor substrate;
- forming a refractory metal film over the gate insulator;
- forming a nitride film over the refractory metal film;
- patterning the nitride film and the refractory metal film;
- nitriding sides of the refractory metal film which have been patterned and exposed;
- and
- forming nitride side walls over the nitrided sides of the patterned refractory metal film and on the patterned nitride film,
- said forming nitride side walls comprises a low-pressure CVD process carried out at a temperature of 780° C.
5 more elements
Dependencies are inferred from the claim text.