Method for manufacturing solid state image pick-up device
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-sik Park, Mikio Takagi, Jae-heon Choi, Sang-il Jung, Jun-taek Lee
Life of this patent
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Abstract
In a method for manufacturing a solid state image pick up device capable of improving gettering efficiency a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side is provided. Subsequently, a polysilicon layer including impurities for gettering having a predetermined concentration is formed on the rear side of the semiconductor substrate. Next, a predetermined thickness of the polysilicon layer including the impurities for gettering is oxidized, and the impurities for gettering are condensed into the reduced polysilicon layer.
Claims19
A method for manufacturing a solid state image pick-up device, the method comprising:
- providing a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side;
- forming a polysilicon layer including impurities for gettering having a predetermined concentration on the rear side of the semiconductor substrate by introducing the impurities for gettering to a level of the solid solubility in silicon into the polysilicon layer;
- and
- reducing the thickness of the polysilicon layer including the impurities for gettering, thereby condensing the impurities for gettering into the reduced polysilicon layer, such that the resulting reduced polysilicon layer has an impurity concentration greater than the solid solubility in silicon and such that the resulting reduced polysilicon layer has a thickness less than its deposition thickness.
A method for manufacturing a solid state image pick-up device, the method comprising:
- providing a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side;
- forming a polysilicon layer including impurities for gettering having a predetermined concentration on the rear side of the semiconductor substrate by introducing the impurities for gettering to a level of the solid solubility in silicon into the polysilicon layer;
- and
- oxidizing a predetermined thickness of the polysilicon layer including the impurities for gettering and condensing the impurities for gettering into the polysilicon layer, such that the resulting polysilicon layer has an impurity concentration greater than the solid solubility in silicon;
- wherein the step of oxidizing a predetermined thickness of the polysilicon layer is performed so that ½ through {fraction (1/10)} of the deposition thickness of the polysilicon layer remains.
A method for manufacturing a solid state image pick-up device, the method comprising:
- providing a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side;
- forming a polysilicon layer including impurities for gettering having a predetermined concentration on the rear side of the semiconductor substrate by introducing the impurities for gettering to a level of the solid solubility in silicon into the polysilicon layer;
- oxidizing a predetermined thickness of the polysilicon layer including the impurities for gettering and condensing the impurities for gettering into the polysilicon layer, such that the resulting polysilicon layer has an impurity concentration greater than the solid solubility in silicon;
- and
- forming a protective layer for preventing out-diffusion of the impurities to cover the rear side of the semiconductor substrate.
Dependencies are inferred from the claim text.