Pattern forming method using photolithography

A pattern forming method of forming a device pattern to a resist film on a to-be-processed substrate by exposing the resist film using a mask including the device pattern and developing the exposed resist film comprising:

• exposing the resist film several times by using the mask including a device region and a monitor region in each of a plurality of chips of the substrate, in exposing the resist film;
• irradiating said monitor region with light having a plurality of wavelengths during developing said resist film and estimating the development time when the size of the device pattern has reached a desired value on the basis of the wavelength dispersion in the intensity of the reflected light of the monitor region;
• and
• supplying a solution onto said substrate during the estimated development time so as to stop the development.

A pattern forming method of forming a device pattern to a resist film on a to-be-processed substrate by exposing the resist film using a mask including the device pattern and developing the exposed resist film comprising:

• exposing the resist film several times by using the mask including a device region and a monitor region in each of a plurality of chips of the substrate, in exposing the resist film;
• irradiating the monitor region with a light having a plurality of wavelengths during developing said resist film, converting a change in an intensity of the reflected light of the monitor region into a change in a phase, and estimating the development time when the size of the device pattern has reached a desired value on the basis of the converted phase;
• and
• supplying a solution onto said substrate in the estimated development time so as to stop the development.

A pattern forming method of forming a device pattern to a resist film on a to-be-processed substrate by exposing the resist film using a mask including the device pattern and developing the exposed resist film comprising:

• exposing the resist film several times by using the mask including a device region and a monitor region in each of a plurality of chips of the substrate, in exposing the resist film;
• checking a focus value and a dose value of the monitor region of each of the chips between exposing and developing the resist film, the checked focus value being derived from the information of the flatness of the substrate measured in a leveling process in an exposure device, the checked dose value being derived from the wavelength dispersion in the intensity of the reflected light of the monitor region;
• determining a monitor chip exposed within a set focus value and in an average dose value from the chips on the basis of the checked focus value and dose value;
• irradiating the monitor region of the monitor chip with light during developing said resist film and estimating the development time when the size of the device pattern has reached a desired value on the basis of the intensity change of the reflected light of the monitor region;
• and
• supplying a solution onto said substrate in the estimated development time so as to stop the development.