Multifunctional polymeric materials and use thereof
AssigneeInternational Business Machines Corporation
InventorsMarie Angelopoulos, Katherina E. Babich, David R. Medeiros, Wayne M. Moreau
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Abstract
A multifunctional polymer comprising a polymeric chain having chromophore groups and cross-linking sites is suitable as a resist material and especially as the underlayer for bilayer and top surface imaging strategies. The multifunctional polymer can function as an antireflective coating, planarizing layer or etch resistant hard mask.
Claims31
A multifunctional polymer comprising a polymeric chain having chromophore groups and crosslinking sites;
- wherein the polymer is crosslinkable without the need of other components and wherein said chromophore groups are capable of interacting with the exposing radiation or beam to which the polymer is to be exposed and are derived from 9-anthracenemethanol, and reduces reflectivity upon exposure to said exposing radiation or beam;
- wherein the chromophore groups are attached to polymeric chain at a ring-carbon position via an electrophilic or nucleophilic aromatic substitution reaction or through phenolic oxygen via a functional group transformation;
- and wherein the amount of said crosslinking sites is about 2 to about 50 mole % based upon the polymeric chain;
- wherein the functional group transformation is selected from the group consisting of etherification and esterification;
- and
- wherein the polymeric chain is selected from the group consisting of poly(4-hydroxystyrene), copolymers of 4-hydroxystyrene, novolac resins, acrylate polymers, methacrylate polymers, fluorocarbon polymers and cycloaliphatic polymers.
A method for forming a pattern which comprises:
- a) providing on a substrate an under layer comprising a multifunctional polymer comprising a polymeric chain having chromophore groups and crosslinking sites;
- wherein the polymer is crosslinkble without the need of other components and wherein said chromophore groups are capable of reducing reflectivity at the interface with a subsequently applied resist;
- wherein the chromophore groups are attached to the polymeric chain at a ring-carbon position via an electrophilic or nucleophilic aromatic substitution reaction or through phenolic oxygen in a functional group transformation;
- and wherein the functional group transformation is selected from the group consisting of etherification and esterification;
- b) at least partially crosslinking the underlayer to form a film;
- c) providing on the underlayer a second and different material comprising a resist composition;
- d) imagewise exposing the resist composition to actinic radiation;
- e) developing the resist composition to form a pattern;
- f) transferring said pattern into the underlayer by the etching using the resist composition that is remaining as a mask;
- and
- g) transferring said pattern into the substrate by etching using the underlayer that is remaining as a mask to form the pattern.
A method for forming a pattern which comprises:
- a) providing on a substrate an underlayer comprising a multifunctional polymer comprising a polymeric chain having chromophore groups and crosslinking sites;
- wherein the polymer is crosslinkable without the need of other components and wherein said chromophore groups are capable of reducing reflectivity at the interface with a subsequently applied resist;
- and wherein the chromophore groups are derived from 9-anthracenemethanol;
- wherein the chromophore groups are attached to the polymeric chain through phenolic oxygen in a functional group transformation;
- b) at least partially crosslinking the underlayer to form a film;
- c) providing on the underlayer a second and different material comprising a resist composition;
- d) imagewise exposing the resist composition to actinic radiation;
- e) developing the resist composition to form a pattern;
- f) transferring said pattern into the underlayer by the etching using the resist composition that is remaining as a mask;
- and
- g) transferring said pattern into the substrate by etching using the underlayer that is remaining as a mask to form the pattern.
Dependencies are inferred from the claim text.