Photoresist monomer, polymer thereof and photoresist composition containing the same
AssigneeHynix Semiconductor Inc.
InventorsGeun Su Lee, Jae Chang Jung, Min Ho Jung
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Abstract
Photoresist monomers of following Formulas 1 and 2, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low absorbance of light having the wavelength of 157 nm, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, R1, R2 and R3 are as defined in the specification of the invention.
Claims20
A photoresist monomer represented by a formula selected from the group consisting of Formula 1 and Formula 2:
- wherein, R1 represents H or CH3;
- R2 is selected from the group consisting of (C1-C20) alkylene, (C1-C10) alkylene substituted with (C1-C10) alkyl and (C1-C10) alkylene substituted with (C1-C10) aryl;
- and
- R3 is an acid labile protecting group.
Dependencies are inferred from the claim text.